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| SMD Type MOS Field Effect Power Transistor 2SK2133 TO-263 +0.1 1.27 -0.1 IC MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A +0.2 8.7 -0.2 High avalanche capabil +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28 -0.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 +0.2 2.54 -0.2 +0.2 15.25 -0.2 Low Ciss Ciss=1090 pF TYP. 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 250 30 16 64 1.5 75 150 -55 to +150 Unit V V A A W W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=250V,VGS=0 VGS= 30V,VDS=0 2.0 4.0 0.2 1090 VDS=10V,VGS=0,f=1MHZ 420 80 20 ID=8.0A,VGS(on)=10V,RL=18.75 ,RG=10 ,VDD=150V 40 60 20 0.26 pF pF pF ns ns ns ns Min Typ Max 100 10 4.0 Unit A A V S VGS(off) VDS=10V,ID=1mA Yfs VDS=10V,ID=8.0A RDS(on) VGS=10V,ID=8.0A Ciss Coss Crss td(on) tr td(off) tf 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 |
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